unisonic technologies co., ltd mje13007 npn silicon transistor www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r203-019.f npn bipolar power transistor for switching power supply applications ? description the utc mje13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. it is particularly suited for 115 and 220 v switch mode applications. ? features * v ceo(sus) 400v * 700v blocking capability lead-free: mje13007l halogen-free:mje13007g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mje13007-ta3-t mje13007l-ta3-t MJE13007G-TA3-T to-220 b c e tube mje13007-tf3- t mje13007l-tf3- t mje13007g-tf3- t to-220f b c e tube
mje13007 npn silicon transistor unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r203-019.f ? absolute maximum rating parameter symbol ratings unit collector-emitter sustaining voltage v ceo 400 v collector-emitter breakdown voltage v cbo 700 v emitter-base voltage v ebo 9.0 v continuous i c 8.0 a collector current peak (1) i cm 16 a continuous i b 4.0 a base current peak (1) i bm 8.0 a continuous i e 12 a emitter current peak (1) i em 24 a total device dissipation t c = 25c p d 80 w operating and storage junc tion temperature t j, t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to case jc 1.56 c/w junction to ambient ja 62.5 c/w note 1: pulse test: pulse width = 5.0 ms, duty cycle 10%. measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), t he device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8?lbs. ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit collector-emitter sustaining voltage v ceo(sus) i c =10ma, i b =0 400 v v ces =700v 0.1 ma collector cutoff current i cbo v ces =700v, t c =125c 1.0 ma emitter cutoff current i ebo v eb =9.0v, i c =0 100 a h fe1 i c =2.0a, v ce =5.0v 8.0 40 dc current gain h fe2 i c =5.0a, v ce =5.0v 5.0 30 i c =2.0a, i b =0.4a 1.0 v i c =5.0a, i b =1.0a 2.0 v i c =8.0a, i b =2.0a 3.0 v collector-emitter satu ration voltage v ce(sat) i c =5.0a, i b =1.0a, t c =100c 3.0 v i c =2.0a, i b =0.4a 1.2 v i c =5.0a, i b =1.0a 1.6 v base-emitter satura tion voltage v be(sat) i c =5.0a, i b =1.0a, t c =100c 1.5 v current-gain-bandwidth product f t i c =500ma, v ce =10v, f=1.0 mhz 4.0 14 mhz output capacitance c ob v cb =10v, i e =0, f=0.1mhz 80 pf resistive load (table 1) delay time t d 0.025 0.1 s rise time t r 0.5 1.5 s storage time t s 1.8 3.0 s fall time t f v cc =125v, i c =5.0a, i b1 =i b2 =1.0a, t p =25 s, duty cycle 1.0% 0.23 0.7 s * pulse test: pulse width 300 s, duty cycle 2.0%
mje13007 npn silicon transistor unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r203-019.f ? typical thermal response 1 0.02 0.01 0.1 0.05 0.2 0.7 1 0.5 0.1 0.5 2 figure1. typical thermal response time, t (msec) 0.2 d=0.5 d=0.2 d=0.1 d=0.05 d=0.02 d=0.01 single pulse p(pk) t1 t2 duty cycle, d=t1/t2 r jc (t)=r(t)r jc r jc =1.56c/w max d curves apply for power pulse train shown read time at t 1 tj (pk) -t c =p (pk) r jc (t) 0.05 0.02 0.01 0.07 5 10 20 50 100 200 500 10k there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 7 is based on t c = 25c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be debated when t c 25c. second breakdown limitations do not debate the same as therma l limitations. allowable current at the volt ages shown on figure 7 may be found at any case temperature by using the appropriate curve on figure 9. at high case temperatures, thermal limitations will redu ce the power that can be handled to values less than the limitations imposed by second breakdown. use of reverse biased safe operating area data (figure 8) is discussed in the applications information section.
mje13007 npn silicon transistor unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r203-019.f table 1. test conditions for dynamic performance reverse bias safe operating ar ea and inductive switching resistive switching test circuits circuit values bv ceo (sus) inductive switching rbsoa l=10mh r b2 =8 v cc =20v i c(pk) =100ma l=20mh r b2 =0 v cc =15v r b1 selected for desired i b1 l=500mh r b2 =0 v cc =15volts r b1 selected for desired i b1 v cc =125v r c =25 ? d1=1n5820 or equiv
mje13007 npn silicon transistor unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r203-019.f ? typical characteristics 1.4 0.02 0.01 0.1 0.05 0.4 0.8 1.2 1 1 0.6 0.5 2 figure 2. base-emitter saturation voltage collector current, i c (a) base-emitte saturation voltage, v be(sat) (v) 10 5 i c /i b =5 i c =-40c 25c 100c 0.2 10 0.02 0.01 0.1 0.05 0.01 0.1 0.5 1 0.2 0.05 0.5 2 figure 3. collector-emitter saturation voltage collector current, i c (a) collector-emitte saturation voltage, v ce(sat) (v) 10 5 i c /i b =5 0.2 i c =-40c 25c 100c 5 2 1 0.02 collector-emitter voltage, v ce (v) dc current gain, h fe 10000 0.1 10 1 10 100 1000 100 figure 6. capacitance reverse voltage,v r (v) capacitance, c (pf) 1000 t j =25c c ib c ob 100 20 10 50 30 0.02 0.5 5 200 2 0.1 100 300 figure 7. maximum forward bias safe operating area collector-emitter voltage, v ce (v) collector current, i c (a) 1000 500 70 50 20 10 0.05 5ms 10 s 1 s extended soa @ 1 s,10 s 1 0.2 0.01 t c =25c dc 1ms bonding wire limit thermal limit second breakdown limit curves apply below rated vceo
mje13007 npn silicon transistor unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r203-019.f ? typical characteristics 10 100 0 300 200 0 4 8 600 6 2 500 700 figure 8. maximum reverse bias switching safe operating area collector-emitter clamp voltage, v cev (v) collector current, i c (a) 800 v be(off) -2v -5v 400 0v t c 100c g ain 4 l c =500 h 1 40 20 80 60 0 0.4 0.8 140 0.6 0.2 120 160 figure 9. forward bias power derating case temperature, t c (c) power derating factor 100 second breakdown derating thermal derating time, t (ns) time, t (ns) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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